| PART |
Description |
Maker |
| HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| W3DG6465V7D1 W3DG6465V-D1 W3DG6465V75D1 W3DG6465V1 |
512MB- 64Mx64 SDRAM UNBUFFERED
|
http://
White Electronic Designs Corporation
|
| HYS64D64020GBDL-6-C HYS64D64020HBDL-6-C |
DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based; Available 3Q04
|
Infineon
|
| W3EG6465S265D3 W3EG6465S263D3 W3EG6465S262D3 W3EG6 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WV3EG64M64ETSU-D3 WV3EG64M64ETSU335D3SG WV3EG64M64 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
| HYS64V6422 HYS64V64220GBDL-75-D HYS64V64220GBDL-8- |
512MB PC133 (2-2-2) 2-bank. FBGA based. available 3Q02 12MB的PC133的（2-2-2银行FBGA封装为基础？可Q02
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank, FBGA based; End-of-Life
|
INFINEON[Infineon Technologies AG]
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| EBE51UD8ABFV EBE51UD8ABFV-AE-E EBE51UD8ABFV-BE-E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
|
Elpida Memory
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
